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作 者:张波[1] 汪义旺[1] 宋佳[1] ZHANG Bo;WANG Yi-wang;SONG Jia(Cooperative Innovation Center of Intelligent Energy Equipment and Electric Energy Conversion,Suzhou Vocational University,Suzhou Jiangxu 215104,China)
机构地区:[1]苏州市职业大学智慧能源装备与电能变换协同创新中心,江苏苏州215104
出 处:《电源技术》2020年第8期1209-1211,共3页Chinese Journal of Power Sources
基 金:江苏省高校品牌专业建设工程资助项目(PPZY2015A089);江苏省建设系统科技计划项目(2017ZD227);江苏省高职院校教师专业带头人高端研修项目资助(2019GRFX098);苏州市科技计划项目(SYG201821,SS201731);江苏省“青蓝工程”项目资助。
摘 要:Boost电路的效率高低直接决定着其应用效果和其所在系统的性能,提高Boost电路的效率至关重要。深入研究SiC器件的特点,在Boost电路中采用新颖的SiC功率半导体器件替代传统的Si器件。设计了适用于SiC MOSFET的驱动电路,引入同步整流技术,并部分地实现了功率器件的软开关,最终设计出了高效的应用在高压场合的Boost电路。实验结果表明全采用SiC器件的Boost电路效率得到了较大提高,可在更高频率下工作,应用同步整流和软开关技术后进一步提高了效率。The efficiency of Boost circuit directly determines its application effect and the performance of its system.It is very important to improve the efficiency of Boost circuit.The characteristics of SiC devices were studied,and the new SiC power semiconductor devices were used to replace the traditional Si devices in Boost circuits.The drive circuit for SiC MOSFET was designed,the synchronous rectifier technology was adopted,and the soft switch of power device was partially realized.The high efficiency Boost circuit applied in high voltage situation was designed.The experimental results show that the efficiency of Boost circuit with SiC device is greatly improved,it can work at higher frequency,and the efficiency is further improved by using synchronous rectifier and soft switch technology.
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