磁控共溅射制备Si掺杂Al薄膜的应力研究  

Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

作　　者：朱京涛[1] 周涛[1] 朱杰[1] 赵娇玲[2,3] 朱航宇 Zhu Jingtao;Zhou Tao;Zhu Jie;Zhao Jiaoling;Zhu Hangyu(School of Physical Science and Engineering,Tongji University,Shanghai 200092,China;Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]同济大学物理科学与工程学院,上海200092 [2]中国科学院上海光学精密机械研究所薄膜光学实验室,上海201800 [3]中国科学院强激光材料重点实验室,上海201800

出　　处：《光学学报》2020年第14期195-200,共6页Acta Optica Sinica

基　　金：国家自然科学基金(11875204,11575127,11705259,U1932167)。

摘　　要：为研制真空紫外与极紫外波段Al基薄膜光学元件,详细研究了Al基薄膜的应力特性及其优化方法。利用应力实时测量装置对共溅射技术制备的5种不同Si掺杂质量分数(0、8.97%、16.49%、28.46%、45.73%)的Al-Si复合薄膜进行应力测试,并采用X射线衍射法表征薄膜的结晶状态。结果表明:Al薄膜中的应力表现为压应力,随着Si在Al中掺杂量的增加,Al中的压应力减小,并且Al的结晶度降低,Al(111)晶向的晶粒尺寸也减小,Al的结晶被抑制;当Si的掺杂质量分数从18.63%增大到31.57%时,Al中的压应力转变为张应力,且张应力随Si掺杂量的增加而进一步增大。本研究为制备Al基滤片、单层膜和多层膜元件提供了技术支撑,在极紫外光刻、同步辐射和天文观测领域具有重要的应用价值。To develop Al-based thin-film optical elements for vacuum ultraviolet and extreme violet bands,the stress characteristics of Al-based thin films and their optimization methods were investigated in this study.Five Al-Si composite films with different Si contents(0,8.97%,16.49%,28.46%,and 45.73%)were prepared by co-sputtering,and their stresses were measured using a real-time stress measurement device.The crystallinity of the films was characterized by X-ray diffraction.The obtained results reveal that the stress in Al film is compressive.With the increase of Si-doping content in Al,the compressive stress decreases and the crystallinity of the Al film and the grain size in Al(111)crystal orientation also decrease,indicating that the crystallization of Al is suppressed.Upon increasing the mass fraction of Si from 18.63%to 31.57%,the compressive stress in the Al film changes to tensile stress,and the tensile stress increases with further increase of Si mass fraction.This study provides technical support for the preparation of Al-based filters and monolayer and multilayer film elements,which will have important applications in the fields of extreme ultraviolet lithography,synchrotron radiation,and astronomical observation.

关 键 词：薄膜 真空紫外 应力 结晶 共溅射 

分 类 号：O484[理学—固体物理]