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作 者:Heng-Yu Yang Ya-Li Chen Wu-Xing Zhou Guo-Feng Xie Ning Xu 杨恒玉;陈亚利;周五星;谢国锋;徐宁(School of Materials Science and Engineering,Hunan University of Science and Technology,Xiangtan 411201,China;Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion,Xiangtan 411201,China;School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China;Deparment of Physics,Yancheng Institute of Technology,Yancheng 224051,China)
机构地区:[1]School of Materials Science and Engineering,Hunan University of Science and Technology,Xiangtan 411201,China [2]Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion,Xiangtan 411201,China [3]School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China [4]Deparment of Physics,Yancheng Institute of Technology,Yancheng 224051,China
出 处:《Chinese Physics B》2020年第8期102-107,共6页中国物理B(英文版)
基 金:the National Natural Science Foundation of China(Grant No.11874145).
摘 要:The ultra-low thermal conductivity of roughened silicon nanowires(SiNWs)can not be explained by the classical phonon-surface scattering mechanism.Although there have been several efforts at developing theories of phonon-surface scattering to interpret it,but the underlying reason is still debatable.We consider that the bond order loss and correlative bond hardening on the surface of roughened SiNWs will deeply influence the thermal transport because of their ultra-high surface-to-volume ratio.By combining this mechanism with the phonon Boltzmann transport equation,we explicate that the suppression of high-frequency phonons results in the obvious reduction of thermal conductivity of roughened SiNWs.Moreover,we verify that the roughness amplitude has more remarkable influence on thermal conductivity of SiNWs than the roughness correlation length,and the surface-to-volume ratio is a nearly universal gauge for thermal conductivity of roughened SiNWs.
关 键 词:thermal conductivity silicon nanowires bond order imperfections phonon-surface scattering
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