Picosecond terahertz pump-probe realized from Chinese terahertz free-electron laser  

作　　者：hao Wang Wen Xu Hong-Ying Mei Hua Qin Xin-Nian Zhao Hua Wen Chao Zhang Lan Ding Yong Xu Peng Li Dai Wu Ming Li 王超;徐文;梅红樱;秦华;赵昕念;温华;张超;丁岚;徐勇;李鹏;吴岱;黎明(Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China;University of Science and Technology of China,Hefei 230026,China;School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information,Yunnan University,Kunming 650091,China;Faculty of Information Engineering,Huanghuai University,Zhumadian 463000,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Institute of Applied Electronics,Chinese Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China [2]University of Science and Technology of China,Hefei 230026,China [3]School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information,Yunnan University,Kunming 650091,China [4]Faculty of Information Engineering,Huanghuai University,Zhumadian 463000,China [5]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [6]Institute of Applied Electronics,Chinese Academy of Engineering Physics,Mianyang 621900,China

出　　处：《Chinese Physics B》2020年第8期127-132,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.U1930116,U1832153,and 11574319);the Fund from the Center of Science and Technology of Hefei Academy of Sciences,China(Grant No.2016FXZY002)。

摘　　要：Electron energy relaxation timeτis one of the key physical parameters for electronic materials.In this study,we develop a new technique to measureτin a semiconductor via monochrome picosecond(ps)terahertz(THz)pump and probe experiment.The special THz pulse structure of Chinese THz free-electron laser(CTFEL)is utilized to realize such a technique,which can be applied to the investigation into THz dynamics of electronic and optoelectronic materials and devices.We measure the THz dynamical electronic properties of high-mobility n-GaSb wafer at 1.2 THz,1.6 THz,and 2.4 THz at room temperature and in free space.The obtained electron energy relaxation time for n-GaSb is in line with that measured via,e.g.,four-wave mixing techniques.The major advantages of monochrome ps THz pump-probe in the study of electronic and optoelectronic materials are discussed in comparison with other ultrafast optoelectronic techniques.This work is relevant to the application of pulsed THz free-electron lasers and also to the development of advanced ultrafast measurement technique for the investigation of dynamical properties of electronic and optoelectronic materials.

关 键 词：free-electron laser ultrafast measurements picosecond phenomena 

分 类 号：TN248.6[电子电信—物理电子学]