Indium doped CsPbI3 films for inorganic perovskite solar cells with efficiency exceeding 17%  

作　　者：Xiaomei Li Kaili Wang Femi Lgbari Chong Dong Wenfan Yang Chang Ma Heng Ma Zhao-Kui Wang Liang-Sheng Liao 

机构地区：[1]Institute of Functional Nano and Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices,Soochow University,Suzhou,215123,China [2]Henan Province Key Laboratory of Photovoltaic Materials,College of Physics&Materials Science,Henan Normal University,Xinxiang,453007,China

出　　处：《Nano Research》2020年第8期2203-2208,共6页纳米研究（英文版）

基　　金：This work was supported by the National Key R&D Program of China(No.2016YFA0202402);the National Natural Science Foundation of China(Nos.61674109 and 91733301);the Natural Science Foundation of Jiangsu Province(No.BK20170059);the Chinese Postdoctoral Science Foundation(No.2015M580460);the Open Fund of the State Key Laboratory of Integrated Optoelectronics(No.IOSKL2018KF07);the Collaborative Innovation Centre of Suzhou Nano Science and Technology,the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD);the“111”Project of the State Administration of Foreign Experts Affairs of China.

摘　　要：In recent years,all-inorganic perovskite materials have set off a research boom owing to features,such as good thermal stability,suitable bandgap,and fascinating optical properties.However,the power conversion efficiency(PCE)and the ambient stability of all-inorganic perovskite solar cells still remain a challenge.Herein,we investigate the effect of the addition of InI3 into CsPbI3 film on the corresponding device.InI3 incorporation could retard the crystallization process and control the growth rate of CsPbI3 polycrystalline films,yielding a high quality film with large grains and few voids.The increment in electrostatic potential and the reduction of carrier recombination enabled the open-circuit voltage of fabricated perovskite solar cell to be increased from 0.89 to 0.99 V.The champion device delivered a power conversion efficiency of 17.09%,which is higher than 14.36%for the reference device.And the InI3-included solar cell without any encapsulation retained 77%of its original efficiency after 860 h aging at room temperature in N2 condition.

关 键 词：indium doping CsPbI3 crystallization retardation stability 

分 类 号：TM914.4[电气工程—电力电子与电力传动]