一种用于5G终端的毫米波收发器前端芯片的研制  

Research and Development of a Millimeter Wave Transceiver Front End Chip for 5G Terminal Applications

作　　者：王美兰 陈炎桂 胡楠 WANG Mei-lan;CHEN Yan-gui;HU Nan(Unisoc Technology Co.,Ltd.,Beijing 100191,China)

机构地区：[1]紫光展锐科技有限公司,北京100191

出　　处：《微波学报》2020年第4期86-89,94,共5页Journal of Microwaves

摘　　要：用0.15μm GaAs增强型赝配高电子迁移率电子管(EPHEMT)工艺研制了一款集功率放大器、低噪声放大器、单刀双掷开关为一体的、可用于5G宽带无线移动通信系统终端的毫米波收发器前端芯片。其中,功率放大器采用电抗匹配技术的两级放大拓扑结构,单刀双掷开关采用正电压控制的对称器件结构,低噪声放大器采用两级最佳噪声兼顾增益的拓扑结构。测试结果表明,24.25~27.5 GHz频带内,芯片发射支路饱和输出功率>22 dBm,附加效率>28%;芯片接收支路噪声系数<3.0 dB,线性增益>13 dB;芯片收发隔离度优于-20 dB。该芯片面积为2.2 mm×1.8 mm。A millimeter wave monolithic microwave integrated circuit(MMIC)which consisted of a power amplifier(PA),a low noise amplifier(LNA)and a single-pole double-throw(SPDT)switch has been successfully fabricated by using 0.15μm GaAs EPHEMT technology.The chip can be applied to transceiver front end of a new generation(5 G)broadband wireless mobile communication system terminal.The PA is designed using two-stage amplification topology with reactance matching technology.The SPDT switch is symmetrically composed of HEMTs at each way,and it’s positive voltage controlled.The LNA is designed using two-stage amplification topology with optimal noise and gain.The test results of fabricated chip show that at 24.25~27.50 GHz,the transmitter of MMIC delivers a saturation output power of more than 22 dBm,the power added efficiency(PAE)is more than 28%,the receiver of MMIC gain demonstrats more than 13 dB,and a maximum noise figure is of 3.0 dB,the T/R isolation of MMIC is better than-20 dB.The chip size is 2.2 mm×1.8 mm.

关 键 词：砷化镓 微波单片集成电路 功率放大器 收发 第五代宽带无线移动通信系统 

分 类 号：TN929.5[电子电信—通信与信息系统] TN859[电子电信—信息与通信工程]