有机非线性光学晶体DAST的太赫兹发射性能  

Terahertz emission properties of organic nonlinear optical crystal DAST

作　　者：李宝珠[1] 武聪[1] 庞子博[1] LI Baozhu;WU Cong;PANG Zibo(No.46 Research Institute of China Electronics Technology Group Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《太赫兹科学与电子信息学报》2020年第4期570-574,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：研究了DAST晶体的有效二阶非线性系数和太赫兹发射性能。实验以DAST-甲醇溶液的亚稳区范围为依据,采用溶液降温法进行DAST的生长。实验发现,降温速率越快,晶体的生长速度越快,但晶体易发生多晶转变;在晶体生长后期,采用较慢的降温速率,有利于晶体厚度的增加。经磨抛后的晶体表面粗糙度能够达到光学测试等级(微米级)要求。经测试,DAST晶片有效二阶非线性系数平均值为16.58 pm/V,实现了频率范围0.84~10 THz的太赫兹波发射,并在2.72 THz处具有最大发射强度。The effective second-order nonlinearity and terahertz emission properties of DAST crystal are mainly studied. Based on the metastable region of DAST-methanol solution, the growth experiment of DAST is carried out by solution cooling methods. It is found that the higher the cooling rate, the faster the crystal growth rate, but the polycrystalline is easy to occur. In the later stage of crystal growth, the lower cooling rate is beneficial to the increase of crystal thickness. After grinding, the surface roughness of the polished crystal could meet the optical test level(micron level) requirement. The average effective second order non-linear coefficient of DAST chip is 16.58 pm/V. Terahertz emission in the frequency range of 0.84-10 THz is realized, and the maximum emission intensity is at 2.72 THz.

关 键 词：DAST晶体 太赫兹 有效二阶非线性系数 性能 

分 类 号：TN209[电子电信—物理电子学]