非制冷红外探测器用AIN多层大腔体陶瓷工艺研究  

Study on AIN Multilayer Large Cavity Ceramics Process for Uncooled Infrared Detector

作　　者：高磊[1] 顾文龙 张浩[1] 崔嵩[1] GAOLei;GU Wen-long;ZHANG Hao;CUI Song(No.43 Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088

出　　处：《混合微电子技术》2020年第2期81-85,共5页Hybrid Microelectronics Technology

摘　　要：通过对非制冷红外探测器用AIN多层大腔体陶瓷布线基板的结构设计、成型及平整度的分析研究发现:当腔体倒角达到R=0.5m叫能够实现大腔体倒角不开裂;通过改进等静压橡胶模具,解决了大腔体制作过程的分层鼓泡,实现AIN多层大腔体生坯的制作;通过优化等静压曲线及烧结整平模具设计,解决了大腔体平整度问题,达到客户提出的平整度要求,最终产品通过验证,成功开发出非制冷红外探测器用AIN多层陶瓷工艺。Through the analysis and research on the structural design,molding and flatness of the AIN multilayer large cavity ceramic wiring board for uncooled infrared detectors,it is found that when the cavity chamfer reaches R=0.5mm,the large cavity chamfer can be achieved without cracking.By optimizing the isostatic pressure curve and sintering and leveling mold design,the flatness problem of the large cavity is solved,and the flatness requirements proposed by the customer were met.The final product passed the verification and successfully developed the AIN multilayer ceramic process for uncooled infrared detectors.

关 键 词：非制冷红外探测器 AIN 大腔体 平整度 

分 类 号：TN215.TG148[电子电信—物理电子学]