铝锑共掺氧化锌纳米线阵列LED发光性能研究  

Luminescence properties of aluminum-antimony co-doped ZnO nanowire arrays LED devices

作　　者：张唐磊 丁宝玉 张翔晖[1] ZHANG Tanglei;DING Baoyu;ZHANG Xianghui(Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics &Electronic Science, Hubei University, Wuhan 430062, China)

机构地区：[1]铁电压电材料与器件湖北省重点实验室,湖北大学物理与电子科学学院,湖北武汉430062

出　　处：《湖北大学学报（自然科学版）》2020年第5期569-574,580,共7页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(11504098)资助。

摘　　要：氧化锌(ZnO)纳米线因具有良好的结晶质量和独特的半导体性质,在光电子器件领域有重要应用前景.利用双元素共掺来提高掺杂元素在ZnO内的固溶度,是获得p型导电ZnO材料的有效方法.本文中利用化学气相沉积法制备Al和Sb共掺的p型ZnO纳米线阵列,通过XRD、SEM、EDS和XPS等手段分析共掺ZnO纳米线的形貌、成分和晶体质量,发现共掺ZnO具有良好的(001)晶向外延取向生长特性,且通过调整升温速率可以调控掺杂ZnO纳米线的晶体质量.基于n-GaN衬底外延生长的共掺ZnO纳米线阵列,构建异质结型LED器件.Ⅰ-Ⅴ曲线结果表明,在±4 V电压下,器件整流比高达13.7,纳米线异质结开启电压为3 V,器件表现出良好的pn结电学特性.电致发光(EL)光谱结果显示,共掺ZnO纳米线LED器件发光峰中心波长约为650 nm,表现为橙红光发射.Zinc oxide(ZnO)nanowires have important application prospects in the field of optoelectronic devices due to their good crystal quality and unique semiconductor properties.Co-doping with two elements to improve the solid solubility of doping elements in ZnO is an effective method to obtain p-type conductive ZnO materials.In this paper,p-type ZnO nanowire arrays co-doped with Al and Sb were prepared by chemical vapor deposition.The morphology,composition and crystal quality of the co-doped ZnO nanowires were analyzed by XRD,SEM,EDS and XPS characterization.The Al and Sb co-doped ZnO nanowire has good epitaxial growth characteristics with growth direction of(001)crystal orientation,and the crystal quality can be controlled by adjusting the heating rate while CVD method.Nanowire arrays heterojunction LED devices were constructed based on co-doped ZnO nanowire arrays epitaxially grown on n-GaN substrates.The I-V curve results show that the rectification ratio of the device is as high as 13.7 under the voltage of±4 V,and the turn-on voltage of the nanowires heterojunction is 3 V,and the device shows good electrical characteristics of typical pn junction.Electroluminescence(EL)spectroscopy results show that the center wavelength of the luminescence peak of the co-doped ZnO nanowire LED device is 650 nm,which appears as orange-red light emission.

关 键 词：氧化锌 共掺 纳米线阵列 异质结 

分 类 号：TB321[一般工业技术—材料科学与工程]