可交联型P(VDF-CTFE-DB)/PMN-PT-Sm纳米复合薄膜的制备及介电和储能性能  

Preparation of Cross-linked P(VDF-CTFE-DB)/PMN-PT-Sm Nanocomposite Films and Their Dielectric and Energy Storage Performances

作　　者：何亭睿 王一平[1] 李雄杰 陈朋 胡悫睿 杨颖[1] 宁洪龙[3] HE Tingrui;WANG Yiping;LI Xiongjie;CHEN Peng;HU Querui;YANG Ying;NING Honglong(State Key Laboratory of Mechanics and Control of Mechanical Structures,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;State Key Laboratory of Luminescent Materials and Devices,Institute of Polymer Optoelectronic Materials and Devices,School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,China)

机构地区：[1]南京航空航天大学机械结构力学及控制国家重点实验室,南京210016 [2]南京航空航天大学材料科学与技术学院,南京210016 [3]华南理工大学材料科学与工程学院,高分子光电材料与器件研究所,发光材料与器件国家重点实验室,广州510640

出　　处：《材料导报》2020年第18期18152-18158,共7页Materials Reports

基　　金：国家自然科学基金(11274174,51790492);111项目(B12021)。

摘　　要：以聚偏氟乙烯-三氟氯乙烯(P(VDF-CTFE))为原料,经过消去反应脱除氯化氢,得到含有分子内双键的P(VDF-CTFE-DB)。选择高介电的钐掺杂铌镁酸铅-钛酸铅(PMN-PT-Sm)铁电陶瓷作为复合相,以可交联的P(VDF-CTFE-DB)作为聚合物基体,通过自由基反应形成交联型P(VDF-CTFE-DB)/PMN-PT-Sm纳米复合薄膜。研究了不同掺杂量的PMN-PT-Sm和交联结构对P(VDF-CTFE-DB)/PMN-PT-Sm纳米复合薄膜介电、储能及漏电流性能的影响。结果表明,当掺杂30%(体积分数,下同)的PMN-PT-Sm时,纳米复合薄膜在100 Hz时的介电常数最大为65。当掺杂20%的PMN-PT-Sm时,纳米复合薄膜的击穿电场为3200 kV/cm,储能密度达到最大值,为9.7 J/cm 3。交联结构的引入显著提高了纳米复合薄膜的击穿电场,有效降低了纳米复合薄膜的漏电流、介电损耗以及提高了纳米复合薄膜的储能密度。此外,这种交联结构能赋予纳米复合薄膜优良的耐溶剂性能。Afluoropolymer with double bonds(P(VDF-CTFE-DB))was synthesized via controlled dehydrochlorination of poly(vinylidene fluoride-co-chlorotrifluoroethylene)(P(VDF-co-CTFE)).High permittivity component of samarium-doped Pb(Mg 1/3 Nb 2/3)O 3-PbTiO 3(PMN-PT-Sm)ferroelectric was selected as the inorganic composite phase,and the cross-linkable P(VDF-CTFE-DB)was used as polymer matrix.Cross-linking P(VDF-CTFE-DB)/PMN-PT-Sm composite film was synthesized by reacting the free radical initiator.The dielectric properties,breakdown strength,energy-storage performances,and solvent resistance of the P(VDF-CTFE-DB)/PMN-PT-Sm nanocomposite films were investigated.As a result,the dielectric constant increases with increasing the volume fraction of PMN-PT-Sm nanoparticles.A maximal dielectric constant of 65 at 100 Hz associated with a dielectric loss of only about 0.058 was obtained in the P(VDF-CTFE-DB)/PMN-PT-Sm nanocomposite film with 30%of PMN-PT-Sm nanoparticle addition.It is experimentally found that the cross-linked network structure has a great influence on the breakdown strength,energy storage performances and compatibility of P(VDF-CTFE-DB)/PMN-PT-Sm nanocomposite films.The significantly improved breakdown strength up to 3200 kV/cm and the highest discharge energy density of about 9.7 J/cm 3 for the cross-linking P(VDF-CTFE-DB)/PMN-PT-Sm nanocomposite film with 20%of PMN-PT-Sm have been achieved.Constructing cross-linked networks among P(VDF-CTFE-DB)and PMN-PT-Sm nanoparticles could be an effective way to decrease the leakage current and dielectric loss,as well as to enhance the breakdown strength and the energy storage performances in the polymer nanocomposites.

关 键 词：氟聚物 交联结构 介电储能 铁电陶瓷 纳米复合薄膜 

分 类 号：TB332[一般工业技术—材料科学与工程] TB324