激光分解4H-SiC制备石墨烯层的晶面取向影响研究  

Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC

作　　者：孙正阳 季凌飞[1,2] 林真源 张彤 许园波[1,2] 张犁天[1,2] Sun Zhengyang;Ji Lingfei;Lin Zhenyuan;Zhang Tong;Xu Yuanbo;Zhang Litian(Institute of Laser Engineering,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Trans-Scale Laser Manufacturing Technology of Ministry of Education,Beijing 100124,China)

机构地区：[1]北京工业大学材料与制造学部激光工程研究院,北京100124 [2]跨尺度激光成型制造技术教育部重点实验室,北京100124

出　　处：《中国激光》2020年第8期44-52,共9页Chinese Journal of Lasers

基　　金：国家自然科学基金(51975017.51575013);2018国家重点研发计划(2018YFB1107500)。

摘　　要：采用KrF准分子激光辐照4H-SiC制备石墨烯层,从4H-SiC晶面取向对石墨烯生长质量影响的角度开展研究工作,分析激光能量密度、脉冲数及晶面取向对石墨烯质量的影响。当激光能量密度为1.06 J/cm^2,脉冲数为8000时,4H-SiC样品极性Si(0001)面和非极性a(11`20)面上生长的石墨烯质量均达到最好。石墨烯与4H-SiC衬底极性Si(0001)面之间存在缓冲层,为石墨烯的生长提供了模板,得到的石墨烯更为有序,缺陷态更少;而非极性a(11`20)面上生成的石墨烯与衬底之间未生成缓冲层,生长的石墨烯层较为无序,对激光参数的变化更为敏感。In this paper,a KrF excimer laser is used to decompose 4H-SiC substrates to prepare graphene layers.The research is focused on the influence of the crystal orientation of 4H-SiC on the quality of the graphene produced.The effects of laser energy density,pulse number,and crystal orientation on graphene quality are analyzed.With a laser energy density of 1.06 J/cm^2 and a pulse number of 8000 shots,the graphene obtained on the polar Si-plane(0001)and on the non-polar a-plane(11`20)of the 4H-SiC sample are both of the best quality.We find that a buffer layer that provides a template for the growth of graphene is formed between Si-plane(0001)and 4H-SiC substrate.The graphene obtained from the buffer layer is consequently more ordered and has fewer defects.In contrast,there is no buffer layer between the photo-generated graphene on a-plane(11`20)and 4H-SiC substrate,which results in the generated graphene being disordered and more sensitive to the laser parameters.

关 键 词：材料 石墨烯 4H-SIC 激光辐照 晶面指数 

分 类 号：TN304[电子电信—物理电子学]