Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation  

作　　者：Yu-Lu Zheng Liang Li Fang-Fei Li Qiang Zhou Tian Cui 郑雨露;李亮;李芳菲;周强;崔田(Affiliations State Key Laboratory of Superhard Materials,College of physics,Jilin University,Changchun 130000,China)

机构地区：[1]State Key Laboratory of Superhard Materials,College of physics,Jilin University,Changchun 130000,China

出　　处：《Chinese Physics Letters》2020年第8期172-176,共5页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China(Grant No.2017YFA0403704);the National Natural Science Foundation of China(Grant Nos.11304113,11474127 and 11574112);the Fundamental Research Funds for the Central Universities.

摘　　要：Few-layered gallium selenide(GaSe)is obtained by using the mechanical exfoliation method,and its properties are characterized by photoluminescence and Raman spectroscopy.The pressure-dependent phonon scatterings of bulk,few-layered,oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium.All the GaSe samples processed a phase transition around 28 GPa.A new vibration mode at 250 cm^-1 is found in oxidized few-layered GaSe by Raman spectra,which is indexed as the Raman vibration mode of α-Se.

关 键 词：spectroscopy. OXIDIZED mode 

分 类 号：TN304[电子电信—物理电子学]