High-responsivity,self-driven photodetectors based on monolayer WS2/GaAs heterojunction  

作　　者：KUILONG LI WENJIA WANG JIANFEI LI WENXIN JIANG MIN FENG YANG HE 

机构地区：[1]School of Electronic and Information Engineering(Department of Physics),Qilu University of Technology(Shandong Academy of Sciences),Jinan 250353,China [2]Institute of Electronic and Electrical,Changzhou College of Information Technology,Changzhou 213164,China

出　　处：《Photonics Research》2020年第8期1368-1374,共7页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(61804086);Natural Science Foundation of Shandong Province(ZR2019PF002);Jiangsu Province Science Foundation for Youths(BK20170431);Changzhou Science and Technology Project(CJ20190010).

摘　　要：Constructing two-dimensional(2D)layered materials with traditional three-dimensional(3D)semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices.Herein,large-area high performance self-driven photodetectors based on monolayer WS2∕GaAs heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region.The detector exhibits an overall high performance,including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm,low noise equivalent power of 1.97×10^−15 W∕Hz1∕2,high detectivity of 4.47×10^12 Jones,and fast response speed of 30/10 ms.This work suggests that the WS2∕GaAs heterostructure is promising in future novel optoelectronic device applications,and also provides a low-cost,easy-to-process method for the preparation of 2D/3D heterojunction-based devices.

关 键 词：WS2 HETEROJUNCTION ULTRAVIOLET 

分 类 号：TN36[电子电信—物理电子学]