Resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment  

作　　者：Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He 

机构地区：[1]Faculty of Physics and Electronic Science,Hubei University,Hubei Key Laboratory of Ferro-&Piezoelectric Materials and Devices,Hubei Key Laboratory of Applied Mathematics,Wuhan,430062,China [2]School of Physics and Materials Science,Radiation Detection Materials&Device Lab,Anhui University,Hefei,230039,China [3]School of Microelectronics,Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin University,Tianjin,300072,China

出　　处：《Journal of Materials Science & Technology》2020年第14期1-6,共6页材料科学技术（英文版）

基　　金：supported by the National Key Research and Development Program under Grant 2017YFB0405600;National Natural Science Foundation of China(No.61774057);The Open Fund of State Key Laboratory on Integrated Optoelectronics(IOSKL2018KF08);The Open Fund of Hubei Key Laboratory of Applied Mathematics(HBAM 201801)。

摘　　要：With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide(IGZO)film may be integrated with IGZO thin film transistors(TFTs)to accomplish system-on-panel applications.In this work,1×1μm^2 via hole structure IGZO based memory device was fabricated and the resistive switching(RS)behavior was investigated.By inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device,highly improved RS performance including lower forming voltage,remarkable uniformity,large memory window of 102,retention property of 10^4 s at 125℃,excellent pulse endurance of 10^7 cycles were achieved.The X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO film.It is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments,which results in more stable and uniform performance.

关 键 词：Memory device Resistive switching Plasma treatment Indium-gallium-zinc-oxide MEMRISTOR 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]