Mo/Cu TES超导性能表征  

Characterization of Mo/Cu Superconducting Transition-Edge Sensor

作　　者：张宏俊[1] 文继 莫钊洪[1] 王新明[2] 熊忠华[1] 帅茂兵[1] ZHANG Hong-jun;WEN Ji;MO Zhao-hong;WANG Xin-ming;XIONG Zhong-hua;SHUAI Mao-bing(Institute of Materials,China Academy of Engineering Physics,Mianyang Sichuan 621900,China;Research Center of Laser Fusion,China Academy of Engineering Physics,Jiangyou Sichuan 621907,China)

机构地区：[1]中国工程物理研究院材料研究所,四川绵阳621900 [2]中国工程物理研究院激光聚变研究中心,四川江油621907

出　　处：《核电子学与探测技术》2020年第1期33-38,共6页Nuclear Electronics & Detection Technology

基　　金：中国工程物理研究院发展基金(TCGH0719)资助。

摘　　要：为了制备满足超高分辨率射线探测要求的超导转变边界探测器,对制备的Mo薄膜和Mo/Cu薄膜表征了其超导电学特性.结果表明,制备的Mo薄膜具有较好的超导性能,Mo/Cu薄膜的△T达到了2.1 mK@352 mK,α值达到了335.在1 mA的电流下,该α值可以满足超高分辨射线探测的要求.In order to prepare superconducting transition-edge sensors(TES)that meet the requirements of ultra-high resolution y-ray detection,the superconducting electrical properties of Mo films and Mo/Cu films were characterized.The results show that the prepared Mo films have good superconducting performance.The AT of Mo/Cu films reaches 2.1 mK@352 mK and the a value reaches 335.At the current of 1 mA,the a value can meet the requirements of ultra-high resolution ray detection.

关 键 词：超高分辨率 γ射线探测 超导薄膜 转变边界探测器 

分 类 号：TL817.1[核科学技术—核技术及应用] O484.5[理学—固体物理]