CdSe晶体及掺Cr^2+激光器的研究进展  

Research Progress of CdSe Crystal and Cr^2+-doped Laser

作　　者：杨辉 杨明 孔博 张敏 安辛友 曾体贤 YANG Hui;YANG Ming;KONG Bo;ZHANG Min;AN Xinyou;ZENG Tixian(College of Physics and Space Science,China West Normal University,Nanchong 637002,China)

机构地区：[1]西华师范大学物理与空间科学学院,南充637002

出　　处：《人工晶体学报》2020年第8期1412-1416,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(U1731123,11804281);教育部春晖计划(Z2017093,Z2016122);四川省教育厅项目(18ZB0577)。

摘　　要：以CdSe晶体光参量振荡器为代表的中红外激光器在生物、医疗和军事等诸多领域有着广泛的应用前景。本文总结了生长CdSe单晶的工艺方法包括熔体法、熔剂法和气相法等,其中常用的为气相法,近年来高压垂直梯度冷凝(HPVGF)技术也逐渐被采用。国内外将本征CdSe晶体用于光参量振荡器件(OPO),适用于多种激光器泵浦源,且输出功率不断提高。而Cr^2+的掺杂能有效提高泵浦效率,实现波长的连续可调。The mid infrared laser,represented by the CdSe crystal optical parametric Oscillator,has a wide range of applications in many fields such as biology,medical treatment and military.In this paper,the methods of growing CdSe single crystal include melt method,flux method and gas phase method,in which gas phase method is most common,and the HPVGF technology has been gradually adopted.The intrinsic CdSe crystal used as OPO device is applied to kinds of laser,and the output power is increasing.Doping of Cr^2+can effectively improve the pumping efficiency and realize continuous wavelength adjustment.

关 键 词：CdSe单晶 气相法 高压垂直梯度冷凝 OPO器件 Cr^2+掺杂 激光器 

分 类 号：O734[理学—晶体学]