适用于变流装置电路仿真的IGBT分段瞬态模型  

Piecewise Transient Model of IGBT Suitable for Complex Circuit Simulation

作　　者：朱庆祥 罗毅飞[1] 刘宾礼[1] 肖飞[1] ZHU Qingxiang;LUO Yifei;LIU Binli;XIAO Fei(National key Laboratory of Science and Technology on Vessel Integrated Power System,Naval University of Engineering,Wuhan 430033,China)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033

出　　处：《高电压技术》2020年第8期2806-2814,共9页High Voltage Engineering

基　　金：国家自然科学基金重大项目(51490681);国家重点基础研究发展计划(973计划)(2015CB251004).

摘　　要：绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)瞬态模型对电力电子系统的分析与设计具有重要意义。目前,考虑精度与仿真效率,物理模型与现有行为模型均难以满足复杂电路的仿真要求。针对这一问题,基于IGBT开通、关断瞬态的物理机理,对其开关过程进行分段表征,提出了一种可适用于复杂电路仿真,且能反映不同电压、电流、温度下IGBT开关瞬态特性的分段模型,并在Simulink软件实现了对复杂电路的仿真。最后,通过与物理模型以及实验数据的对比,对所建立模型的有效性进行了验证。结果表明,所提出的模型可以在不同电压、电流、温度等工况下实现IGBT开关瞬态特性的准确表征,且能用于如逆变拓扑等复杂电路的仿真,模型的仿真效率和仿真精度较好。该模型能够为器件的多时间尺度建模和仿真提供重要支撑。The transient model of IGBT is of great significance for the analysis and design of power electronic systems.At present,considering the accuracy and simulation efficiency,both physical models and existing behavioral models are difficult to meet the requirements of complex circuit simulation.Aiming at this problem,based on the physical mechanism of IGBT turn-on and turn-off transients,the switching process is segmented and characterized.An IGBT piecewise transient model which can be applied to complex circuit simulation and can reflect the temperature influence is proposed and implemented in the simlink software.Finally,the validity of the model is verified by comparison with physical models and experimental data.The comparison results show that the proposed model can accurately characterize the transient characteristics of IGBT switching under different voltage,current and temperature conditions,and can be used for complex circuit simulation with high simulation efficiency.This model provides important support for multi-time scale modeling and simulation of devices.

关 键 词：绝缘栅双极型晶体管(IGBT) 开关瞬态 行为模型 电路仿真 分段模型 变流装置 

分 类 号：TN322.8[电子电信—物理电子学]