状态方程实验用铈微靶的聚焦离子束制备  

Fabrication of High Accuracy Al-Ce Impedance Matching Target by Focused Ion Beam

作　　者：路超 任大鹏[1] 张德志 张厚亮[1] 贾果 史鹏[1] LU Chao;REN Dapeng;ZHANG Dezhi;ZHANG Houliang;JIA Guo;SHI Peng(Institute of Materials,China Academy of Engineering Physics,Jiangyou 621907,China;National Laboratory on High Power Laser and Physics,Shanghai Institute of Laser Plasma,Shanghai 201800,China)

机构地区：[1]中国工程物理研究院材料研究所,四川江油621907 [2]上海激光等离子体研究所,高功率激光物理国家实验室,上海201800

出　　处：《电加工与模具》2020年第4期71-74,共4页Electromachining & Mould

摘　　要：由于Ce材料易氧化、易变形,传统的研磨制靶方法已无法获得高精度的Ce材料状态方程靶。针对高活性材料高精微靶制备的难点,引入了聚焦离子束技术进行Al-Ce阻抗匹配靶的制备。在10-4Pa的高真空下通过Ce靶片的离子束切割、机械手转移、扫描电镜定位、Pt沉积固定、氧化防护Pt膜等,完成了高精度Al-Ce阻抗匹配靶的制备。采用该方法制备的Ce靶,具有氧化程度低、陡直度高、精密程度高、安全性好、成品率高和操作直观等优势。最后通过动态加载状态方程实验证实了聚焦离子束制备高精度微靶的可靠性。In ambient environment,cerium(Ce)is easily oxidized and distorted,which is very unconvenient for the fabrication of micro-scale EOS target by traditional method.Therefore,we introduced focused ion beam(FIB)technology for the fabrication of Al-Ce impedance matching target of high accuracy.Fabrication steps including target cutting by focued ion beam,target transporting by a probe,localization by SEM,target fixing by Pt deposition,oxygen protection layer by Pt deposition are all completed in high vacuum of about 10-4 Pa.EOS target of Ce by this method has very little oxidization,high accuracy,good security to operators and high production rate.At last,we achieved good EOS data of cerium From shock wave compressing experiment of Al-Ce impedance matching target,which is very good proof of the new fabrication method for high accuracy EOS target.

关 键 词：状态方程 聚焦离子束 阻抗匹配靶 

分 类 号：TG669[金属学及工艺—金属切削加工及机床]