一种基于FVF结构的快瞬态响应LDO设计  

Design of a Fast Transient Response LDO Based on FVF Structure

作　　者：刘兴 胡毅 马永旺 李振国 冯曦 冯文楠 唐晓柯 LIU Xing;HU Yi;MA Yongwang;LI Zhenguo;FENG Xi;FENG Wennan;TANG Xiaoke(State Grid Key Lab.of Power Industrial Chip Design and Analysis Technol.,Beijing Smart-Chip Microelec.Technol.Co.,Ltd.,Beijing100192,P.R.China;Beijing Engineer.Research Center of High-Reliab.IC with Power Industrial Grade,Beijing Smart-Chip Microelec.Technol.Co.,Ltd.,Beijing100192,P.R.China)

机构地区：[1]北京智芯微电子科技有限公司国家电网公司重点实验室电力芯片设计分析实验室,北京100192 [2]北京智芯微电子科技有限公司北京市电力高可靠性集成电路设计工程技术研究中心,北京100192

出　　处：《微电子学》2020年第4期509-513,共5页Microelectronics

基　　金：国家电网科技项目(546816190018)。

摘　　要：提出了一种快瞬态响应、宽输入电压范围、无片外电容的低压差线性稳压器(LDO),应用于给主控(MCU)芯片中的Flash供电。该稳压器基于超级源跟随器结构,由快慢两个通路构成。采用电容耦合方式感知负载变化,进一步增强瞬态响应。电路采用UMC 55 nm工艺设计实现,使用Spectre软件进行了仿真验证。仿真结果表明,当负载电流以10 ps的跳变边沿在0~10 mA范围变化时,输出电压的最大上冲值和下冲值分别为109 mV、153 mV。在输入电压2~3.6 V范围内,线性调整率和负载调整率分别为2.6 mV·V^-1和0.5 mV·mA^-1。A capless LDO with fast transient response and wide input voltage range was proposed, which was used to power the flash in MCU chips. The voltage regulator was based on the stucture of super source follower(FVF), and it consisted of two channels, fast and slow. At the same time, the capacitance coupling technology was used to sense the load change and further enhance the transient response. The LDO circuit was designed in UMC 55 nm process and simulated by Spectre software. The simulation results showed that when the load current changed in the range of 0~10 mA with the jump edge of 10 ps, the overshoot and undershoot values of the output voltage were 109 mV and 153 mV, respectively. Within the input voltage of 2~3.6 V, the line regulation and load regulation was 2.6 mV·V-1 and 0.5 mV·mA-1, respectively.

关 键 词：无片外电容LDO FVF 快瞬态响应 宽电源电压范围 MCU 

分 类 号：TN432[电子电信—微电子学与固体电子学]