降低有源区颗粒状缺陷密度的晶圆倒角优化工艺  

Optimization of Wafer Bevel Shape for Reducing Particle Defect Density in Active Area

作　　者：邓森 乔树山 翟冬梅[3] 李希 DENG Sen;QIAO Shushan;ZHAI Dongmei;LI Xi(School of Microelectronics,University of Chinese Academy of Sciences,Beijing100029,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing100029,P.R.China;Semiconductor Manufacturing International Corporation,Beijing100176,P.R.China)

机构地区：[1]中国科学院大学微电子学院,北京100029 [2]中国科学院微电子研究所,北京100029 [3]中芯国际集成电路制造有限公司,北京100176

出　　处：《微电子学》2020年第4期579-583,588,共6页Microelectronics

基　　金：航空科学基金资助项目(201743X2002)。

摘　　要：基于28 nm先进工艺平台,研究了有源区工艺中大颗粒状缺陷(LPD)的产生机理及优化方案。研究结果表明,LPD的产生与晶圆边缘倒角形状相关,较短的倒角导致晶圆在CVD工艺中产生背面划伤。划伤产生的颗粒在气体作用下浮到晶圆表面,经过后续工艺步骤后,在有源区硬掩膜氧化层表面形成LPD。提出了改善晶圆边缘倒角形状和嵌入NANO喷洒工艺步骤的优化方案,消除了LPD,提高了产品的合格率。Based on 28 nm advanced technology platform, mechanism of large particle defect(LPD) formation in active area loop and its optimization methodologies was presented. The results indicated that the defect was associated with wafer edge bevel shape, and shorter bevel shape caused scratch on wafer backside during CVD process. The particle produced by scratching would float to the surface of the wafer by air flow during CVD process. After oxide layer, SiN layer and active area hard mask oxide layer was deposited, and LPD was formed on the surface of the active area hard mask oxide layer. Bevel shape optimization and NANO spray method were presented to reduce LPD and enhance product yield.

关 键 词：晶圆倒角 颗粒状缺陷 有源区 NANO喷洒 

分 类 号：TN405[电子电信—微电子学与固体电子学]