Vacancy defect modulation in hot-casted NiOx film for efficient inverted planar perovskite solar cells  

作　　者：Aili Wang Zhiyuan Cao Jianwei Wang Shurong Wang Chengbo Li Nuo Li Lisha Xie Yong Xiang Tingshuai Li Xiaobin Niu Liming Ding Feng Hao 

机构地区：[1]School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan,China [2]Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China

出　　处：《Journal of Energy Chemistry》2020年第9期426-434,I0012,共10页能源化学（英文版）

基　　金：financially supported by the National Natural Science Foundation of China NSFC(51702038);the Recruitment Program for Young Professionals;the National Key Research and Development Program of China(2017YFA0206600);the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support。

摘　　要：Nickel oxide(NiOx)has exhibited great potential as an inorganic hole transport layer(HTL)in perovskite solar cells(PSCs)due to its wide optical bandgap and superior stability.In this study,we have modulated the Ni26 vacancies in NiOx film by controlling deposition temperature in a hot-casting process,resulting the change of coordination structure and charge state of NiOx.Moreover,the change of the HOMO level of NiOx makes it more compatible with perovskite to decrease energy losses and enhance hole carrier injection efficiency.Besides,the defect modulation in the electronic structure of NiOx is beneficial for increasing the electrical conductivity and mobility,which are considered to achieve the balance of charge carrier transport and avoid charge accumulation at the interface between perovskite and HTL effectively.Both experimental analyses and theoretical calculations reveal the increase of nickel vacancy defects change the electronic structure of NiOx by increasing the ratio of Ni3^+/Ni2^+-and improving the p-type characteristics.Accordingly,an optimal deposition temperature at 120℃enabled a 36.24%improvement in the power conversion efficiency compared to that deposited at room temperature(25℃).Therefore,this work provides a facile method to manipulate the electronic structure of NiOx to improve the charge carrier transport and photovoltaic performance of related PSCs.

关 键 词：VACANCY Energy level CONDUCTIVITY Mobility Electronic structure Hole transport layer 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]