硫脲浓度对Zn-O-S薄膜的影响  

Effect of thiourea concentration on Zn-O-S thin films

作　　者：郭庆 潘洪刚[1] 薛玉明[1] 冯少君[1] 张黎明 GUO Qing;PAN Hong-gang;XUE Yu-ming;FENG Shao-jun;ZHANG Li-ming(Tianjin Key Laboratory of Film Electronic&Communication Devices,Tianjin University of Technology,Tianjin 300384,China;Tianjin Huading Technology Co,Ltd,Tianjin 300171,China)

机构地区：[1]天津理工大学天津市薄膜与电子通讯设备重点实验室,天津300384 [2]天津华鼎科技有限公司,天津300171

出　　处：《电源技术》2020年第9期1316-1320,共5页Chinese Journal of Power Sources

摘　　要：以化学水浴法制备Zn-O-S薄膜,82℃条件下,先在烧杯中依次加入硫酸锌、硫酸铵、氨水,再加入不同浓度的硫脲后,得到Zn-O-S薄膜。使用台阶仪、扫描电镜、X射线衍射、紫外分光光度计对样品进行表征分析,得到薄膜的厚度、结晶形貌、物相特征、光学特性等,利用Tauc公式,导入外推切线得到样品的光学带隙,通过这些信息分析硫脲浓度对样品的影响。当硫脲浓度为0.167 mol/L时,衬底上晶粒紧密孔隙小、杂质少,ZnO纳米棒、大尺寸晶粒都最少;XRD衍射图谱中,在28.5°及31°附近出现明显的衍射峰,分别对应(111)晶向的ZnS和(100)晶向的ZnO;该条件下样品的光学带隙为3.52 eV,是最低的。The Zn-O-S thin film was prepared by CBD.Zinc sulfate,ammonium sulfate and ammonia water were added into the beaker sequentially at 82℃first,with the addition of different concentration of thiourea later,Zn-O-S thin films were obtained.The samples were characterized by surface profiler,SEM,XRD,and UV-Vis,to obtain the thickness,surface morphology,phase crystallization,and optical characteristics of samples respectively.The optical band gap of samples was calculated using the Tauc formula.The information was used to analyze the effect of thiourea concentration on samples’growth.When the volume of thiourea is 25 mL,the samples have compact pores and small impurities with the least ZnO nanorods and large-sized grains.In the XRD diffraction pattern,the obvious diffraction peaks near 28.5°and 31°were observed,corresponding to(111)ZnS and(100)ZnO respectively.And the optical band gap of the sample is 3.52 eV at this condition,which is the lowest.

关 键 词：CBD SC(NH2)2 Zn-O-S薄膜 

分 类 号：TM914[电气工程—电力电子与电力传动]