基于GaN HEMT的隔离型DC-DC变换器驱动电路设计  

Design of driving circuit of isolated DC-DC converter based on GaN HEMT

作　　者：王占国[1] 郑凯元 张维戈[1] 齐洪峰 WANG Zhan-guo;ZHENG Kai-yuan;ZHANG Wei-ge;QI Hong feng(National Active Distribution Network Technology Research Center(Bejing Jiaotong University),Beiig 10044,China;CRRC Industrial Institute Company,Bijing 100070,China)

机构地区：[1]国家能源主动配电网技术研发中心(北京交通大学),北京100044 [2]中车工业研究院有限公司,北京100070

出　　处：《电源技术》2020年第9期1366-1370,共5页Chinese Journal of Power Sources

基　　金：国家重点研发计划(2017YFB1201005)。

摘　　要：GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为新一代功率开关器件,越来越多地应用于各类高频电力电子功率变换器中。由于GaN HEMT属于超高频器件,驱动电路设计需要考虑电磁兼容及杂散参数的影响,与以往Si MOSFET(metal oxide semiconductor field effect transistor)管差异较大。通过实例阐述了GaN HEMT驱动电路设计方法,并通过双脉冲实验验证了在额定电流下,该驱动电路可以控制管子实现可靠开通、关断。最终,搭建了450 W GaN HEMT全桥移相电路实验平台,对比了GaN HEMT与Si MOSFET管在相同的隔离型功率变换器中应用的性能差异。As a new generation of power switching devices,GaN high electron mobility transistors(HEMT)are increasingly used in various high-frequency power electronic power converters.Because GaN HEMTs are ultra-high frequency devices,the design of driving circuit needs to consider the influence of electromagnetic compatibility and stray parameters,making it very different from the previous Si MOSFET(metal oxide semiconductor field effect transistor)tube.The driving circuit determines whether the power converter based on GaN HEMT device can operate reliably.In this paper,a new Si-based GaN HEMT device was applied to a full-bridge phase-shift circuit.The design method of the GaN HEMT drive circuit was illustrated by an example.The double-pulse experiment confirms that the GaN HEMT drive circuit can work normally at the rated current.Finally,the full-load operation of 450 W full-bridge phase-shifting circuit was tested on the experimental platform,and the performance difference between GaN HEMT and Si MOSFET in isolated power converter was compared.The application of GaN HEMT devices in isolated converters can reduce the circuit parasitic oscillations and the switching losses.

关 键 词：GaN HEMT 全桥移相电路 双脉冲实验 

分 类 号：TM57[电气工程—电器]