同质外延YSZ薄膜的制备与结构表征  

Preparation and Structural Characterization of Homogeneous Epitaxial YSZ Films

作　　者：李俊宝 杨丽[1,2] 周益春[1,2] LI Jun-bao;YANG Li;ZHOU Yi-chun(Key Laboratory of Key Film Materials&Application for Equipment(Hunan Province),Xiangtan University,Xiangtan 411105;Key Laboratory of Low Dimensional Materials and Application Technology of Ministry Education,Xiangtan University,Xiangtan 411105 China)

机构地区：[1]湘潭大学装备用关键薄膜材料及应用湖南省国防科技重点实验室,湖南湘潭411105 [2]湘潭大学教育部低维材料及应用技术重点实验室,湖南湘潭411105

出　　处：《湘潭大学学报（自然科学版）》2020年第3期56-61,共6页Journal of Xiangtan University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(11890684,51590891,51672233)。

摘　　要：利用脉冲激光沉积在YSZ[100]基底上同质外延生长不同组分的YSZ薄膜.研究发现,当生长温度为300℃时,薄膜为非晶态,而在温度为650℃时,掺杂10%氧化钇(摩尔分数)的YSZ具有立方结构,而掺杂6%和8%氧化钇的YSZ薄膜同时具有立方和四方结构.通过调控生长工艺条件,以及利用具有不同组分的薄膜与基底来构造不同的应变状态,可以制备具有不同结构的YSZ外延薄膜.YSZ films with different components were grown on YSZ[100]substrate by pulsed laser deposition(PLD).It was found that when the growth temperature was 300℃,the film was amorphous,and when growth temperature was 600℃,the YSZ film doped with 6%and 8%yttrium oxide had a square structure,while the YSZ film doped with 10%yttrium oxide had a cubic structure.YSZ epitaxial thin films with different structures can be prepared by controlling the growth process conditions and using strain states of film with different components and substrate structures.

关 键 词：YSZ薄膜 PLD 同质外延 

分 类 号：O782.9[理学—晶体学]