5G通信的宽带功率放大器设计  

Design of Wideband Power Amplifier for 5G Communication

作　　者：轩雪飞 王杨 刘国华[3] 权循忠[2] 全桂英[2] Xuan Xuefei;Wang Yang;Liu Guohua;Quan Xunzhong;Quan Guiying(Huainan Normal University,Huainan 232038,China;Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]淮南师范学院电子工程学院,安徽淮南232038 [2]淮南师范学院,安徽淮南232038 [3]杭州电子科技大学,浙江杭州310018

出　　处：《廊坊师范学院学报（自然科学版）》2020年第3期24-27,共4页Journal of Langfang Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61871169);射频电路与系统国家教育部重点实验室开放研究项目(KFJJ201807)。

摘　　要：采用GaN HEMT裸管芯片TGF2023-2-02,设计了一款工作于5G频段的宽带功率放大器。首先,在HFSS中合理设置键合线的结构参数并建立模型进行仿真,以实现晶体管与外围的微带电路连接;其次,利用ADS对功率管的大信号模型进行负载牵引,进而获得可以实现高性能的最佳负载阻抗,通过使用多频点阻抗匹配方法有效拓展了功率放大器的带宽。仿真结果表明:在3-6GHz频带范围内大信号增益大于8.6dB,增益平坦度维持在±0.7dB,输出功率为38.6-40dBm,效率为35%-47%。A wideband power amplifier(PA)that can work 5G band is proposed.The GaN HEMT bare-tube chip TGF2023-2-02 is used in the design.First,to realize the connection between the transistor and the peripheral microstrip circuit,the structural parameters of the bonding wire are reasonably set in HFSS and a model is established for simulation.Secondly,the ADS is used to load pull the large signal model of the PA to obtain the optimal load impedance that can achieve good performance,and then the bandwidth of the PA is effectively expanded by using a multiple frequencies matching method.From 3 to 6 GHz,the simulated results show that the large signal gain is greater than 8.6dB,the gain flatness is maintained at±0.7dB,the output power is 38.6-40dBm,and the efficiency is 35-47%,with large signal gain larger than 8 dB.

关 键 词：功率放大器 宽带 多频点匹配 5G GaN HEMT 

分 类 号：TN454[电子电信—微电子学与固体电子学]