小尺寸SCB裸桥与涂LTNR时的电爆发火特性  

Electro-Explosive Ignition Characteristics of Bare and LTNR Coated Small-Sized SCB

作　　者：樊志伟 严楠[1] 贺翔 张良[1] 李朝振[1] 张威[2] 李宋 FAN Zhiwei;YAN Nan;HE Xiang;ZHANG Liang;LI Chaozhen;ZHANG Wei;LI Song(State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China;National Key Laboratory of Micro / Nano Processing Technology at Peking University, Beijing 100871, China)

机构地区：[1]北京理工大学爆炸科学重点试验室,北京100081 [2]北京大学微米/纳米加工技术国家级重点实验室,北京100871

出　　处：《兵器装备工程学报》2020年第9期29-35,共7页Journal of Ordnance Equipment Engineering

基　　金：国家自然科学基金项目(U1530135)。

摘　　要：为了研究小尺寸半导体桥(Semiconductor Bridge,SCB)裸桥和涂斯蒂芬酸铅(Lead Styphnate,LTNR)时的电爆发火特性,在22μF电容放电条件下,对小尺寸磷掺杂单晶硅SCB裸桥与涂LTNR时的电爆、后期放电(Late Time Discharge,LTD)过程的能量及时间数据进行了测试和对比分析。结果表明:裸桥和涂药SCB在8 V、12 V、16 V、20 V和24 V电压下电爆能量的平均值十分接近,裸桥和涂药SCB电爆能量值与电压大小无关。随着电压的提高,裸桥和涂药SCB的LTD能量及时间按照指数规律上升,发火之后的掺杂单晶硅层汽化的面积会不断扩大。裸桥和涂药SCB所有电爆发火样品的电爆能量平均值分别为34.29μJ和34.27μJ,LTNR涂药在电爆过程中吸收能量较少,对电爆能量的影响很小。In order to study the electro-explosive characteristics of bare and Lead styphnate(LTNR)coated small-sized Semiconductor bridge(SCB),the electro-explosive ignition characteristics of P-doped single-crystal silicon SCB was studied under 22μF capacitor discharge ignition system,based on the energy and time data of electric explosion,Late time discharge(LTD)and ignition.Results show that electro-explosive energy of bare and LTNR coated small-sized SCB at 8 V,12 V,16 V,20 V and 24 V is similar and isn’t related to voltage value.As the voltage increases,the LTD energy and LTD time of bare and LTNR coated SCB increase exponentially,the vaporized area of the P-doped single-crystal silicon layer will expand after firing.The average electro-explosive energy of all electro-explosive bare bridge and LTNR coated SCB samples is 34.29μJ and 34.27μJ,respectively,LTNR absorbed less energy during the electric explosion process and had a small impact on the value of electro-explosive energy.

关 键 词：半导体桥 电爆 斯蒂芬酸铅 发火能量 发火时间 

分 类 号：TJ450.2[兵器科学与技术—火炮、自动武器与弹药工程]