MEMS红外光源的高精度控温电路设计  

Design of High-precision Temperature-control Circuit for MEMS Infrared Source

作　　者：李宝玲 余隽[1] 姜云龙 李中洲[1] 唐祯安[1] LI Bao-ling;YU Jun;JIANG Yun-long;LI Zhong-zhou;TANG Zhen-an(School of Biomedical Engineering,Dalian University of Technology,Liaoning Key Lab of IC&BME System,Dalian 116024,China)

机构地区：[1]大连理工大学电信学部生物医学工程学院,辽宁省集成电路技术重点实验室,辽宁大连116024

出　　处：《仪表技术与传感器》2020年第8期18-21,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金(61874018);国家重点研发计划项目课题(2019YFB2005702);中央高校基本科研业务费资助(DUT19LAB33)。

摘　　要：基于MEMS红外光源的稳定驱动需求,设计了一款高精度控温CMOS集成电路,具有对光源温度的实时监测与闭环控制功能,能够克服环境温度变化等干扰因素的影响,从而提高红外光源的温度稳定性。采用0.35μm标准CMOS工艺完成了芯片的流片制造。测试结果显示,在该芯片驱动下,MEMS红外光源系统在10 ms内即可快速升温至450℃,且控温精度优于±1.5℃。该电路实现了温度快速调制、控温精度高、集成度高等优点,满足红外光源的稳定驱动需求。Based on the stable driving demand of MEMS infrared source,a high-precision temperature-controlled CMOS integrated circuit is designed,which has real-time monitoring and closed-loop control function for the temperature of the light source,which can overcome the influence of disturbance factors such as ambient temperature change,and improve the temperature stability of the infrared source.The circuit was designed in a 0.35μm standard CMOS process.The results show that the circuit can drive the MEMS infrared source to 450℃in only 10 ms,and the temperature control precision is less than±1.5℃.The circuit has the advantages of strong driving capability,good temperature control precision,and high integration degree,which are suitable for the stable driving of the MEMS infrared source.

关 键 词：MEMS红外光源 控温电路 集成电路设计 

分 类 号：TN492[电子电信—微电子学与固体电子学]