A synaptic transistor with NdNiO3  

作　　者：Xiang Wang Chen Ge Ge Li Er-Jia Guo Meng He Can Wang Guo-Zhen Yang Kui-Juan Jin 汪翔;葛琛;李格;郭尔佳;何萌;王灿;杨国桢;金奎娟(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics B》2020年第9期31-35,共5页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0303604 and 2019YFA0308500);the National Natural Science Foundation of China(Grant Nos.11674385,11404380,11721404,and 11874412);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2018008);the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDJSSW-SLH020).

摘　　要：Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.

关 键 词：synaptic transistor electrolyte gating artificial synapse NdNiO3 pulsed laser deposition 

分 类 号：TN32[电子电信—物理电子学]