Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor  

作　　者：He Guan Cheng-Yu Jiang Shao-Xi Wang 关赫;姜成语;王少熙(Northwestern Polytechnical University,Xi'an 710072,China)

机构地区：[1]Northwestern Polytechnical University,Xi'an 710072,China

出　　处：《Chinese Physics B》2020年第9期423-428,共6页中国物理B（英文版）

摘　　要：HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃;furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

关 键 词：HfAlO/InAlAs MOS-capacitor annealing temperature interface leakage current 

分 类 号：TN304.21[电子电信—物理电子学]