Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO3 film  

作　　者：Zhi-Bin Ling Qing-Ye Zhang Cheng-Peng Yang Xiao-Tian Li Wen-Shuang Liang Yi-Qian Wang Huai-Wen Yang Ji-Rong Sun 令志斌;张庆业;杨成鹏;李晓天;梁文双;王乙潜;杨怀文;孙继荣(College of Physics&State Key Laboratory,Qingdao University,Qingdao 266071,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]College of Physics&State Key Laboratory,Qingdao University,Qingdao 266071,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Physics B》2020年第9期429-434,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.10974105);the Double-Hundred Talent Plan,Shandong Province,China(Grant No.WST2018006);the Recruitment Program of High-end Foreign Experts,China(Grant Nos.GDW20163500110 and GDW20173500154);the Top-notch Innovative Talent Program of Qingdao City,China(Grant No.13-CX-8).One of the authors(Yi-Qian Wang)was sponsored by the Taishan Scholar Program of Shandong Province,China,the Qingdao International Center for Semiconductor Photoelectric Nanomaterials,China,and Shandong Provincial University Key Laboratory of Optoelectrical Material Physics and Devices,China.

摘　　要：In this paper,we investigate the effects of lattice strain on the electrical and magnetotransport properties of La0.7Sr0.3MnO3(LSMO)films by changing film thickness and substrate.For electrical properties,a resistivity upturn emerges in LSMO films,i.e.,LSMO/STO and LSMO/LSAT with small lattice strain at a low temperature,which originates from the weak localization effect.Increasing film thickness weakens the weak localization effect,resulting in the disappearance of resistivity upturn.While in LSMO films with a large lattice strain(i.e.,LSMO/LAO),an unexpected semiconductor behavior is observed due to the linear defects.For magnetotransport properties,an anomalous in-plane magnetoresistance peak(pMR)occurs at low temperatures in LSMO films with small lattice strain,which is caused by two-dimensional electron gas(2DEG).Increasing film thickness suppresses the 2DEG,which weakens the pMR.Besides,it is found that the film orientation has no influence on the formation of 2DEG.While in LSMO/LAO films,the 2DEG cannot form due to the existence of linear defects.This work can provide an efficient way to regulate the film transport properties.

关 键 词：LSMO film lattice strain electrical transport MAGNETOTRANSPORT 

分 类 号：O484.4[理学—固体物理]