Flux-to-voltage characteristic simulation of superconducting nanowire interference device  

作　　者：Xing-Yu Zhang Yong-Liang Wang Chao-Lin Lv Li-Xing You Hao Li Zhen Wang Xiao-Ming Xie 张兴雨;王永良;吕超林;尤立星;李浩;王镇;谢晓明(State Key Laboratory of Functional Material for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;CAS Center for Excellence in Superconducting Electronics,Shanghai 200050,China)

机构地区：[1]State Key Laboratory of Functional Material for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]CAS Center for Excellence in Superconducting Electronics,Shanghai 200050,China

出　　处：《Chinese Physics B》2020年第9期553-558,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0304000);the National Natural Science Foundation of China(Grant Nos.61671438 and 61827823);the Science and Technology Commission of Shanghai Municipality,China(Grant No.18511110200);the Program of Shanghai Academic/Technology Research Leader,China(Grant No.18XD1404600).

摘　　要：Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices,we propose a superconducting nanowire interference device in this study,which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor.A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device.The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility.Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.

关 键 词：superconducting nanowire switching effect flux-to-voltage conversion interference device 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TM26[电气工程—电工理论与新技术]