Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications  

作　　者：Wenqiang Song Fei Hou Feibo Du Zhiwei Liu Juin JLiou 宋文强;侯飞;杜飞波;刘志伟;刘俊杰(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;The College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [2]The College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China

出　　处：《Chinese Physics B》2020年第9期559-563,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61874098 and 61974017);the Fundamental Research Project for Central Universities,China(Grant No.ZYGX2018J025).

摘　　要：A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.

关 键 词：electrostatic discharge(ESD) enhanced gated-diode-triggered silicon-controlled rectifier(EGDTSCR) modified lateral silicon-controlled rectifier(MLSCR) failure current holding voltage 

分 类 号：TM461[电气工程—电器] TN31[电子电信—物理电子学]