纳米半导体场电子发射:真空纳电子学的基石与愿景  

Field Electron Emission of Nano-semiconductors:A Foundation and Vision of Vacuum Nanoelectronics

作　　者：王如志[1,2,3] 严辉 WANG Ruzhi;YAN Hui(College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Advanced Functional Materials,Ministry of Education,Beijing 100124,China;Beijing Key Laboratory of Microstructure and Property of Solids,Beijing 100124,China)

机构地区：[1]北京工业大学材料科学与工程学院,北京100124 [2]新型功能材料教育部重点实验室,北京100124 [3]固体微结构与性能北京市重点实验室,北京100124

出　　处：《北京工业大学学报》2020年第10期1081-1090,共10页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(11774017)。

摘　　要：综述了作者近20年在纳米半导体场电子发射及其作为冷阴极应用的理论模型、优化结构与相应实验研究方面取得的系列进展与突破.理论上提出了宽带半导体能带弯曲场发射模型和量子结构增强场发射的思想,并在其纳米半导体场发射特性实验研究中得到证实.实验上研制出了具有优异场发射性能的几种纳米半导体场发射冷阴极,为该真空纳米电子器件的实际应用奠定了基础.最后,对该领域研究的瓶颈问题及未来发展趋势进行了述评.A series of progresses and breakthroughs in the theoretical model,structural design and preparation of field electron emission cold cathodes in recent 20 years were summarized.The theory of the band bending mechanism for field emission in wide-band gap semiconductors and the structural enhancement mechanism of field emission from multilayer semiconductor films were proposed,and it was confirmed in the experimental study of field emission characteristics of nano-semiconductor.Several kinds of field emission cold cathodes with excellent field emission properties were developed in the experiment,which laid a foundation for the practical application of new vacuum nano electronic devices.The bottleneck problems and future development trend in this field were proposed.

关 键 词：纳米半导体 场电子发射 量子隧穿 真空纳电子学 超薄膜 量子冷阴极 

分 类 号：TN389[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]