Au/Bi0.8Ba0.2FeO3/La0.7Sr0.3MnO3异质结的阻变效应研究  

Resistive switching effect in Au/Bi0.8Ba0.2FeO3/La0.7Sr0.3MnO3 heterostructures

作　　者：邓浩亮[1] 石少波[1] 王金华[1] DENG Hao-liang;SHI Shao-bo;WANG Jin-hua(School of Science,Tianjin University of Technology and Education,Tianjin 300222,China)

机构地区：[1]天津职业技术师范大学理学院,天津300222

出　　处：《天津职业技术师范大学学报》2020年第3期47-50,56,共5页Journal of Tianjin University of Technology and Education

基　　金：天津职业技术师范大学科研发展基金资助项目(KJ14-32).

摘　　要：采用脉冲激光沉积技术在(001)取向的SrTiO3(STO)单晶衬底上制备Bi0.8Ba0.2FeO3(BBFO)/La0.7Sr0.3MnO3(LSMO)异质结,并获得Au/BBFO/LSMO器件。I-V测试表明,Au/BBFO/LSMO器件除有整流特性外,还表现出双极性阻变效应且电流的开关比约为30。基于X射线光电子能谱的测试结果,Au/BBFO/LSMO器件所表现出的阻变行为可归因于BBFO薄膜中的氧空位在电场作用下的迁移,氧空位的迁移可以改变Au/BBFO界面势垒的高度和耗尽层的厚度。该结果有利于理解Au/BBFO/LSMO器件的阻变机制,使其在存储器件和多功能异质结中得到应用。The Bi0.8Ba0.2FeO3(BBFO)/La0.7Sr0.3MnO3(LSMO)heterostructures were deposited on(001)oriented SrTiO3(STO)single crystal substrates by using pulsed laser deposition system,and Au/BBFO/LSMO devices were obtained.The I-V test showed that Au/BBFO/LSMO heterostructures displayed a rectifying property.Moreover,the bipolar resistive switching effect was observed with an ON/OFF current ratio of about 30.Based on the X-ray photoelectron spectroscopy,the observed resistive switching behavior could be attributed to the electric-field-induced migration of oxygen vacancies,which modulated the barrier height and depletion layer thickness at the Au/BBFO interfaces.The results facilitate understanding of the resistance mechanism of Au/BBFO/LSMO heterostructures and explore their applications in memory devices and the multifunctional heterostructures.

关 键 词：铁酸铋 异质结 阻变效应 界面 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]