Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters  

作　　者：Elyes Garoudja Walid Filali Slimane Oussalah Noureddine Sengouga Mohamed Henini 

机构地区：[1]Plateforme Technologique de Microfabrication,Centre de Développement des Technologies Avancées,cité20 août 1956,Baba Hassen,Algiers,Algeria [2]Microelectronics and Nanotechnology Division,Centre de Développement des Technologies Avancées,cité20 août 1956,Baba Hassen,Algiers,Algeria [3]Laboratory of Metallic and Semiconducting Materials,Universitéde Biskra,B.P 455,07000 Biskra RP,Algeria [4]School of Physics and Astronomy,Nottingham Nanotechnology and Nanoscience Center,University of Nottingham,Nottingham,NG72RD,UK

出　　处：《Journal of Semiconductors》2020年第10期45-49,共5页半导体学报（英文版）

摘　　要：In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were measured at temperature ranges from 100 to 300 K.The main parameters of this Schottky diode,such as the ideality factor,barrier height,series resistance and saturation current,have been extracted using both analytical and heuristics methods.Differential evolution(DE),particle swarm optimization(PSO)and artificial bee colony(ABC)have been chosen as candidate heuristics algorithms,while Cheung technic was selected as analytical extraction method.The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy,convergence speed and robustness.

关 键 词：barrier height heuristic methods multi-quantum wells parameters extraction Schottky diode 

分 类 号：TN311.7[电子电信—物理电子学]