Te自助熔剂定向凝固法生长CdTe晶体  

Growth of CdTe Crystal via A Te Self-Flux Directional Solidification Method

作　　者：金敏[1,2] 胡皓阳 刘柱[1] 徐静涛[1] 江浩川[1] 蒋俊[1] JIN Min;HU Haoyang;LIU Zhu;XU Jingtao;JIANG Haochuan;JIANG Jun(Ningbo Institute of Industrial Technology,Chinese Academy of Sciences,Ningbo 315201,Zhejiang,China;College of Materials,Shanghai Dianji University,Shanghai 201306,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [2]上海电机学院材料学院,上海201306

出　　处：《应用技术学报》2020年第3期205-210,共6页Journal of Technology

基　　金：浙江省公益研发项目(2017C31006);上海市自然科学基金(19ZR1419900)项目资助。

摘　　要：碲化镉(CdTe)晶体是一种制造室温X射线和γ射线探测器最为理想的半导体材料,在医学、食品、安检、核废料监测等应用领域前景广阔。采用一种Te自助溶剂定向凝固技术生长CdTe晶体,在区熔温场及坩埚旋转系统的综合作用下,获得了平坦状的理想固液界面形貌。生长25 mm的CdTe晶体横截面单晶区域面积可达70%,从56 mm的CdTe晶体中可截取尺寸达15 mm×15 mm×3 mm的单晶,电学测试表明CdTe晶体在未掺杂改性条件下电阻率达108Ω·cm。红外透射显示,CdTe晶体中包含尺寸范围为1~20μm的Te夹杂,这是CdTe单晶生长过程中出现的主要微观缺陷。该工作取得的相关成果对未来CdTe晶体生长技术发展具有一定参考价值和借鉴意义。Cadmium telluride(CdTe)crystal is one of the most ideal semiconductor materials for making room temperature X-ray andγray detectors,which has a wide application prospect in medicine,food,security inspection,nuclear waste monitoring and other fields.A Te self-flux directional solidification technology was proposed to grow CdTe crystal.Under the combined action of zone melting temperature field and crucible rotating system,the ideal solid-liquid interface morphology with micro bulge or flat shape was obtained.The single crystal area in the cross section of 25 mm CdTe crystal can reach 70%,and the single crystal with the size of 15 mm×15 mm×3 mm can be cut from the 56 mm CdTe crystal.Electrical test shows the CdTe crystal has excellent electrical properties under the condition of undoped modification,and the resistivity is up to 108Ω·cm.The infrared transmission analysis shows that CdTe crystal contains Te inclusions with a size range of 1-20μm,which is the main micro defect in the growth process.The results obtained have certain reference value and significance for the future development of CdTe crystal growth technology.

关 键 词：CdTe晶体 Te自助溶剂 定向凝固法 固液界面 

分 类 号：O782[理学—晶体学]