Group Ⅱ-Ⅵ semiconductor quantum dot heterojunction photodiode for mid wave infrared detection  

作　　者：Abhijit Chatterjee Atul Abhale Naresh Pendyala KSR Koteswara Rao 

机构地区：[1]Space Applications Centre ISRO,Sensors Development Area,Ahmedabad 380015,India [2]Department of Physics,Indian Institute of Science,Bangalore 560012,India

出　　处：《Optoelectronics Letters》2020年第4期290-292,共3页光电子快报（英文版）

摘　　要：In this article we report the development of 10×10 photodiode array by realizing heterojunction between mercury cadmium telluride(HgCdTe)quantum dot(diameter^14 nm)and silicon responsive in mid wave infrared(MWIR)range(=3-5μm)at room temperature.Performance of this optical sensor has been evaluated experimentally and Detectivity of 1.6×10^8 cm/■W has been achieved at spectral wavelength of 3.μgm at 300 K.This work ascertains the compatibility of chemically synthesized HgCdTe quantum dots with commercially available direct injection type readout integrated circuits(ROIC)for the development of low cost large format MWIR focal plane array(FPA).

关 键 词：HETEROJUNCTION temperature. QUANTUM 

分 类 号：TN215[电子电信—物理电子学]