基于硫氰酸亚铜的n-i-p型钙钛矿太阳电池界面能级匹配及稳定性的初步研究  

Preliminary Study on Interface Energy Level Alignment and Stability of n-i-pType Perovskite Solar Cells Based on CuSCN

作　　者：侯世欣 崔兴华 王鹏阳 黄茜[1,2,3] 丁毅[1,2,3] 李跃龙[1,2,3] 张德坤 赵颖 张晓丹[1,2,3] HOU Shixin;CUI Xinghua;WANG Pengyang;HUANG Qian;DING Yi;LI Yuelong;ZHANG Dekun;ZHAO Ying;ZHANG Xiaodan(Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China;EngineeringReseaech Center of Thin Film Photoelectronic Technology Ministry of Education,Tianjin 300350,China)

机构地区：[1]南开大学,光电子薄膜器件与技术研究所,天津300350 [2]天津市光电子薄膜器件与技术重点实验室,天津300350 [3]教育部薄膜光电子技术工程中心,天津300350

出　　处：《人工晶体学报》2020年第9期1590-1598,共9页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2018YFB1500103);高等学校学科创新引智计划(111计划)(B16027);国家自然科学基金(61674084);天津市科技计划项目(18ZXJMTG00220);中央高校基本科研业务费(63191736,ZB19500204)。

摘　　要：宽带隙的无机空穴传输材料硫氰酸亚铜(CuSCN)具有低成本、高载流子迁移率、良好的稳定性,以及优异的光透过性等优点,是一种非常有潜力的空穴传输层材料。但是目前基于CuSCN空穴传输层的n-i-p型钙钛矿太阳电池(PSCs)的光电转换效率(PCE)比基于spiro-OMeTAD的电池效率低很多,其主要原因为电池的开路电压较低。本研究团队发现钙钛矿吸收层带隙对基于CuSCN的电池开路电压有较大的影响,本文分别制备了基于带隙为1.55 eV,1.60 eV以及1.65 eV的钙钛矿太阳电池,其中基于CuSCN的器件的效率分别为12.8%,14.4%,10.7%(基于spiro-OMeTAD的钙钛矿太阳电池效率分别为20.8%,19.1%和17.5%)。通过研究发现1.60 eV带隙的钙钛矿能够与CuSCN空穴传输层(HTL)之间形成较好的界面能级匹配,获得最高的效率,电池的开路电压能够达到1.06 V,电池PCE为14.4%。更重要的是在相对湿度(RH)30%~40%的空气中,未封装的基于CuSCN HTL钙钛矿太阳电池经过120℃处理1 h后仍能够保持原来性能的92.4%,而基于spiro-OMeTAD HTL钙钛矿太阳电池只能保持原来性能的49.7%。这表明基于CuSCN的n-i-p型钙钛矿太阳电池具有良好的热稳定性,是制备稳定钙钛矿太阳电池的理想空穴传输材料之一。The copper thiocyanate(CuSCN)is an inorganic hole transport material with wide-bandgap low cost,high carrier mobility,good stability and excellent light transmittance which has great potential for hole transport layer.However,the current power conversion efficiency(PCE)of the n-i-p type perovskite solar cell(PSCs)based on CuSCN is much lower than that based on spiro-OMeTAD.The main reason is that the PSCs with low open-circuit voltage.It is found that the band gap of the perovskite absorber layer has a great impact on open-circuit voltage of PSCs.PSCs with different band gap 1.55 eV,1.60 eV and 1.65 eV were fabricated,the PCE of devices based on CuSCN are 12.8%,14.4%and 10.7%,respectively(The PCE of devices based on Spiro are 20.8%,19.1%and 17.5%,respectively).The PSCs with a band gap of 1.60 eV form a better energy level alignment with CuSCN and the device with open-circuit voltage of 1.06 V can be achieved.The PCE of champion device is 14.4%.What’s more,when PSCs are exposed to the air with a relative humidity(RH)of 30%to 40%,the unencapsulated PSCs based on CuSCN maintains 92.4%of its initial power conversion efficiency(PCE)at 120℃for 1 h.In a contrast,the device based on spiro-OMeTAD only matains 49.7%of its initial efficiency.It demonstrated that PSCs based on CuSCN with good thermal stability in n-i-p structure devices,which is an ideal hole transport material for stable devices.

关 键 词：n-i-p型钙钛矿太阳电池 CUSCN 钙钛矿吸收层带隙 能级匹配 稳定性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]