加热面朝下的池沸腾汽泡动态行为研究  被引量:1

Bubble Dynamic Behavior Study on Pool Boiling with Downward Facing Heated Surface

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作  者:钟达文[1] 史昊鹏 孟继安[2] 秦天骄 张显 刘赟[3] ZHONG Dawen;SHI Haopeng;MENG Ji’an;QIN Tianjiao;ZHANG Xian;LIU Yun(Beijing Key Laboratory of Passive Safety Technology for Nuclear Energy,North China Electric Power University,Beijing 102206,China;School of Aerospace Engineering,Tsinghua University,Beijing 100084,China;School of Energy,Power and Mechanical Engineering,North China Electric Power University,Baoding 071003,China)

机构地区:[1]华北电力大学非能动核能安全技术北京市重点实验室,北京102206 [2]清华大学航天航空学院,北京100084 [3]华北电力大学能源动力与机械工程学院,河北保定071003

出  处:《原子能科学技术》2020年第10期1795-1800,共6页Atomic Energy Science and Technology

基  金:国家自然科学基金资助项目(51706068,51706072);北京市自然科学基金资助项目(3192035)。

摘  要:基于Matlab软件开发了自动识别气液两相流界面程序,程序可获得气液界面变化、汽膜厚度、汽膜脱离周期和汽膜法向速度等特征。利用该程序对沟槽结构加热表面朝下布置时,在不同倾角、不同热流密度下的汽泡动态数据进行了处理和分析。结果表明:加热表面朝下发生核态沸腾时,汽膜厚度随热流密度的增大而增大,汽泡脱离周期随热流密度的增大先减小,而后维持在一稳定值;汽膜脱离周期随倾角的增大而减小,倾角为5°时的汽膜脱离周期稳定在0.27 s左右。当发生沸腾危机时,汽膜厚度迅速减小,这可作为动态监测加热表面沸腾状态的依据。Based on the Matlab software,a program for automatic identification of vapor liquid two-phase flow interface was developed.The program can obtain such characteristics as vapor liquid interface change,vapor film thickness,vapor film departure period and normal velocity.The dynamic data of bubbles on the downward facing heated grooved surface with different inclination angles and heat fluxes were processed and analyzed by this program.The results show that when the downward facing heated surface under the nucleate boiling,the vapor film thickness increases with the heat flux,and the bubble departure period decreases with the increase of the heat flux firstly and then maintains a stable value.The vapor film departure period decreases with the increase of inclination angle,and is about 0.27 s when the inclination angle is 5°.When the boiling crisis occurs,the vapor film thickness decreases rapidly,which can be used as the basis for dynamically monitoring the boiling state of heated surface.

关 键 词:加热表面朝下 沸腾 图像处理 汽泡 

分 类 号:TL331[核科学技术—核技术及应用]

 

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