基于石墨烯场效应晶体管的光电混频器研究  

Research of Optoelectronic Mixer Based on Graphene FET

作　　者：顾晓文 吴云[1,2] 曹正义 王琛全[1,2] GU Xiaowen;WU Yun;CAO Zhengyi;WANG Chenquan(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing 210016,CHN;The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,CHN)

机构地区：[1]微波毫米波单片集成和模块电路重点实验室,南京210016 [2]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2020年第3期166-169,175,共5页Optoelectronic Technology

基　　金：国家自然科学基金项目(No.61874104)。

摘　　要：研究了基于石墨烯场效应晶体管(GFET)的光电混频器(Optoelectronic Mixer,OEM)。器件采用叉指电极结构,增大了器件的光吸收效率,并避免了顶栅结构栅金属对光的反射作用。采用基于7.62 cm硅基GFET的圆片工艺,实现了栅长为1μm共8指的器件制备。测试结果表明,器件的工作频率达到20 GHz。在20 GHz工作频率下,器件光探测响应度达到2.8 mA/W,光载20 GHz射频变换到1 GHz中频的混频效率为-15.87 dB。The optoelectronic mixer based on graphene field effect transistor was researched. To improve the optical absorption efficiency by the graphene and avoid the reflection of the incident light by the top gate electrode,the interdigital electrodes were adopted. The device was fabricated on silicon wafer by the 7.62 cm silicon GFET process. The fabricated device had 8 interdigital electrodes with gate length of 1 μm. An experimental measurement was performed,which showed that the operating frequency of the OEM could be over 20 GHz for both photodetection and optoelectronic mixing.In particular,the photoresponsivity was 2.8 mA/W for 20 GHz photodetection. Futhermore,a 20 GHz optical microwave signal was used and successfully down-converted to a 1 GHz IF signal,and the mixing efficiency was measured to be-15.87 dB.

关 键 词：石墨烯场效应晶体管 光电混频器 叉指电极 混频效率 

分 类 号：TN29[电子电信—物理电子学]