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作 者:刘玉倩 吝伶艳[1,2,3] 张建花 李卓晓[1,2,3] 宋建成 雷志鹏[1,2,3] LIU Yuqian;LIN Lingyan;ZHANG Jianhua;LI Zhuoxiao;SONG Jiancheng;LEI Zhipeng(College of Electrical and Power Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi Key Laboratory of Mining Electrical Equipment and Intelligent Control,Taiyuan University of Technology,Taiyuan 030024,China;National&Provincial Joint Engineering Laboratory of Mining Intelligent Electrical Apparatus Technology,Taiyuan University of Technology,Taiyuan 030024,China)
机构地区:[1]太原理工大学电气与动力工程学院,山西太原030024 [2]太原理工大学煤矿电气设备与智能控制山西省重点实验室,山西太原030024 [3]太原理工大学矿用智能电器技术国家地方联合工程实验室,山西太原030024
出 处:《绝缘材料》2020年第10期10-15,共6页Insulating Materials
基 金:国家自然科学基金资助项目(51701136、51977137、51577123);山西省国家科学基金资助项目(201901D211044、201803D121024、201701D221240、201601D21092、201601D202052)。
摘 要:CaCu3Ti4O1(2 CCTO)新型介电陶瓷以其高介电常数和高频率稳定性等优异性能,在高介电材料研究领域和高介电电容器领域成为关注的热点。然而,目前由于其击穿场强较小,限制了其应用范围。本文综述了最近几年国内外CCTO陶瓷击穿场强的研究进展。首先介绍了常用的CCTO陶瓷制备工艺,其次详细归纳了制备工艺和元素掺杂对其击穿场强的影响,最后总结了CCTO陶瓷击穿场强提高的规律与原因,并将其精炼为3种击穿机理。The new type CaCu3Ti4O12(CCTO)dielectric ceramic has excellent properties such as high dielectric constant and high frequency stability and becomes a hot spot in the field of high dielectric materials and high dielectric capacitors field.However,the low breakdown electric field of CCTO limits its application range.This paper summarized the research progress in breakdown field strength of CCTO ceramic inside and outside China in recent years.The common preparation process of CCTO ceramic was introduced at first,and then the effects of preparation process and element doping on its dielectric properties were summarized in detail.Finally,the law and reason for the increase of breakdown field strength of CCTO ceramics were summarized and refined into three breakdown mechanisms.
关 键 词:CaCu3Ti4O12陶瓷 制备工艺 掺杂改性 击穿场强
分 类 号:TM215[一般工业技术—材料科学与工程]
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