室温半导体红外光电探测器研究进展  

Research progress of room temperature semiconductor infrared photodetectors

作　　者：谢天 叶新辉 夏辉[2] 李菊柱 张帅君 姜新洋 邓伟杰 王文静 李玉莹 刘伟伟 李翔[1] 李天信[2] XIE Tian;YE Xin-Hui;XIA Hui;LI Ju-Zhu;ZHANG Shuai-Jun;JIANG Xin-Yang;DENG Wei-Jie;WANG Wen-Jing;LI Yu-Ying;LIU Wei-Wei;LI Xiang;LI Tian-Xin(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Mathematics and Science College,Shanghai Normal University,Shanghai 200234,China;School of Physical Science and Technology,Shanghai Tech University,Shanghai 201210,China)

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]上海师范大学数理学院,上海200234 [4]上海科技大学物质科学与技术学院,上海201210

出　　处：《红外与毫米波学报》2020年第5期583-594,共12页Journal of Infrared and Millimeter Waves

基　　金：中科院青促会会员(2018276);中国科学院先导B(XDB43010200,XDB43010400)。

摘　　要：室温工作将为光子型红外探测开辟更广泛的应用,系统整理和分析了从近红外到长波红外的III–V族及Ⅱ-Ⅵ族半导体探测器的室温性能,讨论不同材料体系和器件结构的室温暗电流机制。其中InAs/GaSb等二类超晶格的短周期带间级联结构以及HgCdTe抑制俄歇过程的方案在提升中长波红外室温探测性能方面都显示出了独特的优势。这些电子学结构的设计与近年来亚波长光子结构增强耦合、降低暗电流的新进展相结合,有望实现近室温工作的高灵敏红外探测。Room temperature operation of infrared photon detectors will open up a wider range of applications.This article summarizes the room temperature performance and dark current mechanism of semiconductor devices from near infrared to long wavelength infrared.Different methods to suppress dark current including the design of the interband cascade structure of InAs/GaSb typeⅡsuperlattices and the nonequilibrium operation mode of HgCdTe to suppress the Auger process show unique advantages.These electronic structural designs,combined with the latest progress in subwavelength photonic structures to enhance light coupling and reduce dark current,hold the promise to achieve a high performance infrared imaging chip operating in room temperature in the near future.

关 键 词：室温红外光电探测 暗电流机制 带间级联 碲镉汞 亚波长光子结构 

分 类 号：TN215[电子电信—物理电子学]