稳定提拉法晶体生长界面的装置和方法研究  

Study on Device and Method of Stabilizing Growth Interface of Czochralski Method

作　　者：周益民[1] 何晔[1] 岑伟[1] 陈川贵[1] 邓江涛 ZHOU Yimin;HE Ye;CEN Wei;CHEN Chuangui;DENG Jiangtao(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;Emicore Co.Ltd,Zhuhai 519040,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]麦格磁电科技有限公司,广东珠海519040

出　　处：《压电与声光》2020年第5期718-720,共3页Piezoelectrics & Acoustooptics

摘　　要：为了解决传统提拉单晶体生长界面不稳定的难题,该文在传统全自动提拉单晶炉等径控制理论的基础上,通过原料补充装置,不断添加与晶体生长量相等的晶体原料至坩埚内,以稳定晶体生长液面的高度不变;再通过光学放大和电荷耦合器件(CCD)成像装置测量晶体实时直径的变化,以此变化率调整晶体旋转速度,最终使晶体生长界面始终维持在一个相对稳定的理想状态,从而保证晶体外形符合设定要求和内部品质的优良。In order to solve the problem of unstable interface in the conventional Czochralskysingle crystal growth interface,on the basis of the conventional automatic control theory of the single crystal equal diameter,through raw material supplement device,the crystal raw materials equal to the crystal grow amount being added constantly into the crucible to stable the height of crystal growth liquid surface.Then,the real-time diameter change of the crystal is measured by the optical amplifier and charge coupled device(CCD)imaging device,and the crystal rotation speed is adjusted by this rate of change,and finally the crystal growth interface is always maintained in a relatively stable ideal state to ensure that the crystal shape conforms to the setting requirements and the internal quality in the crucible stable crystal growth on the surface of the liquid height is not changed,and then through the optical amplifier and CCD imaging device measuring crystal diameter variation in real time,in order to adjust the crystal rotation rate,eventually make crystal growth interface is always maintained in a relatively stable state of ideal,ensure crystal conform to the requirements of the set and the internal quality of excellent shape.

关 键 词：提拉(CZ)法 生长界面 单晶炉 晶体生长 自动控制 

分 类 号：TM382[电气工程—电机] O78[理学—晶体学]