一种低损耗硅基MZ电光调制器的驱动电极设计  

Design of low-loss silicon MZ electro-optic modulator driving electrodes

作　　者：刘永超 纪鹏飞 何卫锋[1] LIU Yong-chao;JI peng-fei;HE Wei-feng(Department of Micro-Nano Electronics,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学微纳电子学系,上海266240

出　　处：《微电子学与计算机》2020年第10期13-17,共5页Microelectronics & Computer

基　　金：国家重点研究与发展计划(2016YFB200205)。

摘　　要：为了满足高数据带宽的硅光互联应用要求,高速硅光调制器的设计至关重要.本文基于IMEC的硅光子SOI工艺,提出了一种低损耗高带宽的行波MZ调制器的驱动电极.在详细分析了趋肤效应、行波损耗、邻近效应等物理效应对行波电极信号完整性的影响的基础上,通过在行波电极上增加一定宽度的顶层金属的方法,使MZ调制器的低频损耗降低了13%,高频损耗降低了5%,并使电光调制3 dB带宽提高至28 GHz.In order to meet the requirements of silicon optical interconnect applications with high data bandwidths,the designofhigh-speed silicon optical modulators is of vital importance.Based on the silicon photonic SOI process of IMEC,a driving electrode for a low-loss and high-bandwidth traveling wave MZ modulator is proposed.Based on a detailed analysis of the effects of skin effects,traveling wave loss,proximity effects and other physical effects on the traveling wave electrode signal,a small amount of metal with a certain width is added to the top of traveling wave electrode,which leads to the low-frequency loss of MZ modulator decreasing by 13%and the high-frequency lossdecreasing by 5%.Additionally,the 3 dB bandwidth of MZ modulator is enhanced to 28 GHz.

关 键 词：电光调制器 高速行波电极 趋肤效应 损耗 

分 类 号：TN929.3[电子电信—通信与信息系统]