一种提高大电流LDO瞬态响应的技术  

A technique for improving the transient response of high current LDO

作　　者：梅琦 龙燕 刘智[1] 姚思远[1] 葛梅 刘文平[1] MEI Qi;LONG yan;LIU Zhi;YAO Si-yuan;GE mei;LIU Wen-ping(Xian Microelectronics Technology Institute,Xian 710054,China)

机构地区：[1]西安微电子技术研究所,陕西西安710064

出　　处：《微电子学与计算机》2020年第10期64-68,共5页Microelectronics & Computer

摘　　要：提出了一种有效提升大电流输出的低压差线性稳压器(LDO)瞬态响应的技术.该技术采用新颖的电压双反馈环路,实现了带宽延展;采用摆率增强电路提高了功率管栅极节点的压摆率;采用输出电流泄放电路,加快了负载电流突降后的恢复.基于0.6μm BiCMOS工艺完成设计、流片.结果表明:在1 mA^5 A,斜率为1.25 A/μs的负载突变情况下,输出电压下冲仅30.8 mV,过冲仅20.7 mV.A technique is proposed to improve the transient response of high output current low-voltage regulator(LDO).This technique uses a novel dual feed back loop which achieves the band width extension and a slew-rate enhancement circuit which enhances the slew-rate at the gate of the power transistor and an output current discharge circuit which boosts the recovery speed of the output after the undershoot of the load current.Designed and fabricated with 0.6μm BiCMOS process.The results show that the output voltage undershoot is only 30.8 mV and overshoot is only 20.7 mV under the condition of a load mutation of 1 mA to 5 A when the slope is 1.25 A/μs.

关 键 词：低压差线性稳压器 瞬态响应 双反馈环路 

分 类 号：TN432[电子电信—微电子学与固体电子学]