采用超声雾化液化学机械抛光(CMP)氧化锆陶瓷的材料去除特性  

Material Removal Mechanism of CMP Zirconia Ceramics by Ultrasonic Atomization

作　　者：李庆忠 夏明光 施卫彬 LI Qingzhong;XIA Mingguang;SHI Weibin(College of Mechanical Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学机械工程学院,江苏无锡214122

出　　处：《材料科学与工程学报》2020年第5期835-839,750,共6页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51175228)。

摘　　要：采用浸泡腐蚀法研究了雾化抛光液与钇稳定氧化锆陶瓷(Y-TZP)之间的化学反应对其表面硬度的影响,通过雾化施液CMP抛光工艺分别在纯机械、纯化学及化学机械作用下进行雾化CMP试验,分析讨论了雾化CMP过程中原子级的材料去除特性;最后,研究了化学腐蚀软化层对氧化锆陶瓷材料去除速率及表面质量的影响。试验结果表明,精细雾化液CMP过程中在基片表面形成一层硬度比基体材料小的软质层,材料去除主要是化学和机械共同作用的结果,其去除率超过材料总去除率的94%,且化学机械交互作用的动态平衡点与抛光过程中工艺参数的设置有关,选择适当的工艺参数是实现对材料的高效去除和获得高质量表面的关键。In order to study the effect of chemical corrosion of polishing liquid on its surface hardness of Y-TZP ceramics in a immersion method,ultrasonic atomization CMP test was carried out under sole mechanical action,sole chemical action and both the mechanical and chemical coaction,respectively.The atom-level material removal characteristics of the Y-TZP ceramics during the atomization CMP process was analyzed and discussed.Finally,the effects of chemical metamorphic softening layer on the zirconia ceramic material removal rate and surface quality were investigated.The results show that the substrate surface forms a soft layer whose hardness is lower than the matrix material,during the process of the fine atomized liquid CMP zirconia ceramic.Material removal rate,which is mainly caused by both the chemical and mechanical coaction,is more than 94%of total,and the dynamic equilibrium point of the chemical-mechanicalcoaction is related to the setting of the process parameters in the polishing process.In order to achieve efficient removal to materials and high-quality surface,the appropriate process parameters must be selected.

关 键 词：Y-TZP 材料去除特性 雾化施液 软质层 化学机械交互作用 

分 类 号：TG739[金属学及工艺—刀具与模具]