Pb掺杂的一维铁磁半导体CrSbSe3的电磁性能研究  

Investigation on the electromagnetic properties of lead-doped one-dimensional ferromagnetic semiconductors CrSbSe3

作　　者：彭义 公祥南[3] 王爱峰 柴一晟 周小元[2,3] 顾豪爽[1] PENG Yi;GONG Xiangnan;WANG Aifeng;CHAI Yishen;ZHOU Xiaoyuan;GU Haoshuang(Faculty of Physical and Electronic Sciences, Hubei University, Wuhan 430062, China;College of Physics, Chongqing University, Chongqing 401331, China;Analytical and Testing Center, Chongqing University, Chongqing 401331, China)

机构地区：[1]湖北大学物理与电子科学学院,湖北武汉430062 [2]重庆大学物理学院,重庆401331 [3]重庆大学分析测试中心,重庆401331

出　　处：《湖北大学学报（自然科学版）》2020年第6期681-686,共6页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(51972102,51772035)资助。

摘　　要：采用自助熔剂法生长高质量准一维CrSbSe3单晶材料,研究Pb掺杂对产物晶体结构和电磁特性的影响.结果表明,实验所得产物是正交结构的一维针状铁磁单晶材料.由于杂质能级随温度升高而激发,通过少量Pb掺杂可在100~300 K温度范围内对单晶的电阻率进行显著调控.同时,掺杂后的单晶在磁场平行晶轴b方向和垂直晶轴b方向的饱和磁矩和饱和磁化强度均得到提升,显示出晶体在磁学中的各向异性.In this paper,the high-quality quasi one-dimensional CrSbSe3 single crystals were grown by a self-flux method.The impact of Pb doping on the crystal structure and electromagnetic properties of the products was studied.The results show that the product is consisted of one-dimensional acicular ferromagnetic single crystals with orthogonal structure.Due to the excitation of impurity level with the increase of temperature,the resistivity of the single crystals can be significantly controlled with the temperature in range of 100~300 K after a small amount of Pb doping.At the same time,the saturation magnetic moment and the saturation magnetization of the doped single crystals in the direction of parallel and vertical b axis are enhanced,which shows the anisotropy of the crystal in magnetism.

关 键 词：单晶 CrSbSe3 电阻率 饱和磁矩 

分 类 号：O731[理学—晶体学]