Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance  

作　　者：Bin Wang Sheng Hu Yue Feng Peng Li Hui-Yong Hu Bin Shu 王斌;胡晟;冯越;李鹏;胡辉勇;舒斌(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;Xi'an Microelectronic Technology Institute,Xi'an 710054,China)

机构地区：[1]State Key Discipline Laboratory o f Wide Bandgap Semiconductor Technology,School o f Microelectronics,Xidian University,Xi'an 710071,China [2]Xi'an Microelectronic Technology Institute,Xi'an 710054,China

出　　处：《Chinese Physics B》2020年第10期473-478,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Science Research Plan in Shaanxi Province,China(Grant No.2018JQ6064);the Science and Technology Project on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029).

摘　　要：Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.

关 键 词：Ge-based TFET two line tunneling paths point tunneling on-state current density 

分 类 号：TN386[电子电信—物理电子学]