Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE  

作　　者：Shan Li Jun Lu Si-Wei Mao Da-Hai Wei Jian-Hua Zhao 黎姗;鲁军;毛思玮;魏大海;赵建华(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences(CAS),Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China;Beijing Academy of Quantum Information Science,Beijing 100193,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences(CAS),Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China [3]Beijing Academy of Quantum Information Science,Beijing 100193,China

出　　处：《Chinese Physics B》2020年第10期479-483,共5页中国物理B（英文版）

基　　金：Project supported by the National Program on Key Basic Research Project,China(Grant No.2018YFB0407601);the Key Research Project of Frontier Science of the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC015 and XDPB12);the National Natural Science Foundation of China(Grant Nos.11874349 and 11774339)。

摘　　要：A synthetic antiferromagnet based on a thin antiferromagnetically coupled Co2MnSi/MnGa bilayer with Pt capping is proposed in this work. Square magnetic loops measured by anomalous Hall effect reveal that a well perpendicular magnetic anisotropy is obtained in this structure. A very large coercivity of 83 kOe (1 Oe = 79.5775 A⋅m^−1) is observed near the magnetic moment compensation point of 270 K, indicating an antiferromagnetic behavior. Moreover, the anomalous Hall signal does not go to zero even at the magnetic compensation point, for which the difficulty in detecting the conventional antiferromagnets can be overcome. By changing the temperature, the polarity of the spin–orbit torque induced switching is changed around the bilayer compensation point. This kind of thin bilayer has potential applications in spin–orbit-related effects, spintronic devices, and racetrack memories.

关 键 词：exchange coupling magnetization compensation anomalous Hall effect molecular-beam epitaxy 

分 类 号：TN304.055[电子电信—物理电子学]