Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis  

作　　者：Hui-Fang Xu Xin-Feng Han Wen Sun 许会芳;韩新风;孙雯(Institute of Electrical and Electronic Engineering,Anhui Science and Technology University,Fengyang 233100,China)

机构地区：[1]Institute of Electrical and Electronic Engineering,Anhui Science and Technology University,Fengyang 233100,China

出　　处：《Chinese Physics B》2020年第10期556-565,共10页中国物理B（英文版）

基　　金：Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502);the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。

摘　　要：The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.

关 键 词：dopingless tunnel field effect transistor line tunneling lincarity parameters 

分 类 号：TN386[电子电信—物理电子学]